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This 91MCC101B chip capacitor features a double-side edge-retained design and is specially engineered for various precision electronic devices. It delivers outstanding performance in core parameters, with a standard capacitance of 100pF±20% tested under the conditions of 1kHz, 1Vrms, 25°C and no DC bias, a withstand voltage of 50V, and a wide operating temperature range that adapts to complex working conditions. The plating adopts high-spec TaN/TiW/Ni/Au composite material, with the thickness of both upper and lower layers not less than 2.5µm, ensuring excellent electrical conductivity and structural firmness. It is compatible with H20E conductive adhesive for bonding, boasting a simple and easy-to-operate process, and clear welding process requirements are specified to enhance application reliability. The storage condition is only 20-25°C with 40%-60% humidity, and it has a shelf life of 1 year after delivery, guaranteeing stable and reliable quality.
| Name | Chip Capacitor |
| Model | 91MCC101B |
| Type | Double-side Edge-retained Type |
| Capacitance | 100pF±20%@1kHz,1Vrms,25°C,No DC Bias |
| Withstand Voltage | 50V |
| Operating Temperature | -55℃~+125℃ |
| Plating - Upper Layer | TaN/TiW/Ni/Au, 2.5µm Min |
| Plating - Bottom Layer | TaN/TiW/Ni/Au, 2.5µm Min |
| Overall Dimensions | 0.18，0.25，0.15µm |
| Storage Conditions | 20-25℃, 40%-60% Relative Humidity |
Remarks：
1. Storage Conditions: 20-25℃, 40%-60% Relative Humidity;
2. Shelf Life: 1 year after delivery under the specified storage conditions;
3. Suitable for bonding process, matching conductive adhesive H20E, baking at 120℃ for 30 minutes;
4. The welding position of the welding wire shall be 25µm or more from the edge of the electrode to avoid electrode falling off.
This 91MCC101B chip capacitor features a double-side edge-retained design and is specially engineered for various precision electronic devices. It delivers outstanding performance in core parameters, with a standard capacitance of 100pF±20% tested under the conditions of 1kHz, 1Vrms, 25°C and no DC bias, a withstand voltage of 50V, and a wide operating temperature range that adapts to complex working conditions. The plating adopts high-spec TaN/TiW/Ni/Au composite material, with the thickness of both upper and lower layers not less than 2.5µm, ensuring excellent electrical conductivity and structural firmness. It is compatible with H20E conductive adhesive for bonding, boasting a simple and easy-to-operate process, and clear welding process requirements are specified to enhance application reliability. The storage condition is only 20-25°C with 40%-60% humidity, and it has a shelf life of 1 year after delivery, guaranteeing stable and reliable quality.
| Name | Chip Capacitor |
| Model | 91MCC101B |
| Type | Double-side Edge-retained Type |
| Capacitance | 100pF±20%@1kHz,1Vrms,25°C,No DC Bias |
| Withstand Voltage | 50V |
| Operating Temperature | -55℃~+125℃ |
| Plating - Upper Layer | TaN/TiW/Ni/Au, 2.5µm Min |
| Plating - Bottom Layer | TaN/TiW/Ni/Au, 2.5µm Min |
| Overall Dimensions | 0.18，0.25，0.15µm |
| Storage Conditions | 20-25℃, 40%-60% Relative Humidity |
Remarks：
1. Storage Conditions: 20-25℃, 40%-60% Relative Humidity;
2. Shelf Life: 1 year after delivery under the specified storage conditions;
3. Suitable for bonding process, matching conductive adhesive H20E, baking at 120℃ for 30 minutes;
4. The welding position of the welding wire shall be 25µm or more from the edge of the electrode to avoid electrode falling off.
